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| AWT6202 GSM850/GSM900/DCS/PCS Quad Band PowerPlexerTM with Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES * * ANADIGICS developed technologies (InGaP HBT/pHEMT) High Module Efficiency: 45% GSM900 (Equivalent 57% PA Efficiency) 40% DCS (Equivalent 52% PA Efficiency) Fully Compliant Harmonics Under Mismatch Integrated Power Control Scheme Integrated Reference Voltage Integrated PA/Switch/Low Pass Filters Symmetrical low loss receive paths High isolation switch (TX to RX, RX on/off) ESD protected antenna port (15 kV) Small footprint (6 mm x 6 mm x 1.0 mm) GPRS capable (class 12) Power control range >50dB PRODUCT DESCRIPTION The AWT6202 is the third generation GSM PowerPlexerTM. It has been developed to minimize time to market for GSM handset and PDA designers. This highly integrated module requires only basic RF decoupling and DC blocking on the receive and antenna ports. All the RF ports are 50 V. The part also has an excellent ESD rating of 1 kV on RF inputs and 15 kV on the antenna port. The temperature stability of the high gain HBT PAs are ideal for supporting class 12 GPRS, while the low loss pHEMT switch provides high isolation with very low current consumption. The integrated power control scheme reduces the number of external components associated with a power control function, and facilitates fast and easy production calibration. The power control range is typically 55 dB. * * * * * * * * * * APPLICATIONS * Dual/Tri/Quad BandHandsets and PDAs DCS/PCS DCS/PCS_IN PCS_RX DCS_RX CNTL1 CNTL2 CNTL3 VBATT CEXT VRAMP Logic/Power Controller ANT GSM850_RX GSM900_RX GSM_IN GSM850/900 Figure 1: Functional Block Diagram 02/2005 AWT6202 ELECTRICAL CHARACTERISTICS Table 1: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC) Input Power (RFIN) Power Control Voltage (VRAMP) Storage Temperature (TSTG) Maximum Reflow Temperature MIN -55 - MAX +7 +11 1.8 150 240 UNIT V dB m V C C Exceeding the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of this data sheet. Exposure to maximum ratings for extended periods can adversely affect device reliability. Table 2: ESD Ratings PARAMETER ESD Threshold Voltage (Antenna Port) ESD Threshold Voltage (Control Inputs) ESD Threshold Voltage (RF Inputs) ESD Threshold Voltage (RX Ports) METHOD HBM HBM HBM HBM RATING 15 1 1 300 UNIT kV kV kV V Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500, capacitance = 100pF. Table 3: Logic Level Definitions (VCC = 3.0 to 4.8 V, TC = 25 3 C) PARAMETER VOH VOL Input Bias Current MIN 1.2 -0.2 - TYP - MAX 3 0.5 10 UNIT V V mA 2 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 Table 4: Logic Control Table MODE SHUTDOWN C N TL 1 0 C N TL2 0 C N TL3 0 DESCRIPTION Low current state where module is disabled. This mode enables a low loss path from the antenna to GSM850_RX port. PAs are disabled. This mode enables a low loss path from the antenna to GSM900_RX port. PAs are disabled. This mode enables a low loss path from the antenna to DCS_RX port. PAs are disabled. This mode enables a low loss path from the antenna to PCS_RX port. PAs are disabled. Switch is in transmit mode and GSM850/900 PA is enabled. Switch is in transmit mode and DCS/PCS PA is enabled. Not Used. PAs Disabled. GSM850_RX_EN 1 0 1 GSM900_RX_EN 0 1 0 DCS_RX_EN 1 1 0 PCS_RX_EN 0 0 1 GSM_TX_EN DCS_PCS_TX_EN Not USed 1 1 0 0 1 1 0 1 1 Table 5: Control Timing PARAMETER Switching Delay from RX to TX Mode Switching Delay from TX to RX Mode Switching Delay from RX to Shutdown Switching Delay from TX to Shutdown MIN - TYP 0.5 0.5 0.5 0.5 MAX - UNITS ms ms ms ms COMMENTS POUT Rise Time - 1 - ms Time for power at antenna to rise from -10 dBm to within 0.2 dB of maximum output power. Time for power at antenna to fall from maximum output power to within 0.2 dB of -10 dBm. POUT Fall Time - 1 - ms ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 3 AWT6202 Table 6: Operating Ranges PARAMETER Supply Voltage (VBATT) Power Down Current (VBATT = 4.8 V) RX Current (VBATT = 4.8 V) Control Voltage (VRAMP) VRAMP Input Capacitance Case Temperature (TC) Duty Cycle MIN 3.0 0 0 0.2 -20 TYP 3.5 3 MAX 4.8 10 30 1.6 85 50 UNIT V mA mA V pF C % COMMENTS Parametric performance is guaranteed under specified operating conditions. Table 7: Receiver Specifications (Mode = RX (see control table), VBATT = 3.5 V, ZIN = ZOUT = 50 V, TC = 25 3 C) , PARAMETER GSM850/900 Insertion loss DCS/PCS Insertion loss Receiver Return loss Receiver Isolation ANT to RX_OFF TX Power at RX ports MIN 15 15 25 25 - TYP 1.0 1.2 -10 -13 MAX - UNIT dB dB dB dB dB dB dB m dB m Comments FIN = 869 to 960 MHz, VBATT = 3.0 to 4.8 V, TC = -20 to +85C FIN = 1805 to 1990 MHz , VBATT = 3.0 to 4.8 V, TC = -20 to +85C FIN = 869 to 960 MHz FIN = 1805 to 1990 MHz FIN = 869 to 960 MHz FIN = 1805 to 1990 MHz GSM850/900 POUT = 33.2 dBm DCS/PCS POUT = 30.3 dBm 4 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 Table 8: GSM850/900 Electrical Specification (Mode = GSM_TX_EN, VBATT = 3.5 V, ZIN = ZOUT = 50 , TC = 25 3 C, PIN = 3 dBm, PWIDTH = 1154 ms, Duty Cycle = 25%) PARAMETER Frequency (FIN) Input Power (PIN) Output Power (POUT) Degraded Output Power Module Efficiency (PA+Switch+Filter) Forward Isolation 1 MIN 824 880 0 33.2 30.8 TYP 3 33.7 31.7 45 MAX 849 915 5 UNITS MHz MHz dB m dB m dB m % VRAMP = 1.6 V VBATT = 3.0 V, VRAMP = 1.6 V, PIN = 0 dBm, TC = 85C VRAMP = 1.6 V, PIN = 3 dBm, VBATT = 3.5 V PIN = 5 dBm, VBATT = 3 to 4.8 V Mode = GSM900_RX_EN or GSM850_RX_EN, see control table VRAMP = 0.2 V, PIN = 5 dBm, VBATT = 3 to 4.8 V Mode = GSM_TX_EN, see control table VBATT = 3 to 4.8 V, POUT = 5 to 33.2 dBm VSWR =10:1 All angles VBATT = 3 to 4.8 V, POUT = 5 to 33.2 dBm, TC = -20 to 85 C PIN = 5 dBm, VBATT = 4.8 V, POUT = 5 to 33.2 dBm, All phases of load FIN = 849 MHz FOUT = 869 to 894 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2 dBm FIN = 915 MHz FOUT = 925 to 935 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2 dBm FIN = 915 MHz FOUT = 935 to 960 MHz RBW = VBW = 100 kHz, POUT = 5 to 33.2d Bm All power levels 5 COMMENTS - -55 -51 dB m Forward Isolation 2 - -25 -10 dB m Harmonic 2nd 3fo to 12.75 GHz Stability: < 1GHz > 1GHz - -40 -40 - dB m - - -36 -30 dB m Ruggedness 10:1 - - VSWR - -88 -84 dB m RX Band Noise - -81 -78 dB m - -88 -84 dB m Input VSWR - - 2.5:1 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 Table 9: DCS/PCS Electrical Specification (Mode = DCS_PCS_TX_EN, VBATT = 3.5 V, ZIN = ZOUT = 50 V, TC = 25 3 C, PIN = 3 dBm, PWIDTH = 1154 ms, Duty Cycle = 25%) PARAMETER Frequency (FIN) Input Power (PIN) Output Power DCS/PCS (POUT) Degraded Output Power Module Efficiency (PA+Switch+Filter) Forward Isolation 1 MIN 1710 1850 0 30.3 28.0 - TYP 3 31.3 29.0 40 MAX 1785 1910 5 - UNITS MHz MHz dB m dB m dB m % COMMENTS VRAMP = 1.6 V VBATT = 3.0 V, VRAMP = 1.6 V, PIN = 0 dBm, Tc = 85C VBATT = 3.5 V, VRAMP = 1.6 V, PIN = 3 dBm, PIN = 5 dBm, VBATT = 3 to 4.8 V Mode = DCS_RX_EN or PCS_RX_EN, see control table VRAMP = 0.2 V, PIN = 5 dBm, VBATT = 3 to 4.8 V Mode = DCS_PCS_TX_EN, see control table VBATT = 3 to 4.8 V, POUT = 0 to 30.3dBm VSWR =10:1 All angles VBATT = 3 to 4.8 V, POUT = 0 to 30.4 dBm, TC = -20 to 85 C - -55 -51 dB m Forward Isolation 2 - -25 -10 dB m Harmonics 2fo to 12.75 GHz Stability: < 1GHz > 1GHz Ruggedness: - -40 - dB m - - -36 -30 dB m 10:1 - - PIN = 5 dBm, VBATT = 4.8 V, VSWR POUT = 0 to 30.3 dBm, All phases of load FIN = 1785 or 1910 MHz, FOUT = 1805 to 1880 MHz, or 1930 to 1990 MHz POUT = 0 to 30.3 dBm, RBW = VBW = 100 kHz All power levels RX Band Noise - -88 -84 dB m Input VSWR - - 2.5:1 6 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 Figure 2: Pinout (X-Ray View) Note: unassigned pins are ground pads Table 10: Pinout Description PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 NAME DCS/PCS_IN CNTL1 CNTL2 CNTL3 VBATT C EXT VRAMP GSM_IN GND GND GND GND GND GND FUNCTION DCS/PCS RF Input Control logic input Control logic input Control logic input Battery supply connection Bypass Analog input for power control GSM850/900 RF Input Ground Ground Ground Ground Ground Ground PIN 15 16 17 18 19 20 21 22 23 24 25 26 27 28 NAME GND GSM900_RX GSM850_RX GND ANT DCS_RX PCS_RX GND GND GND GND GND GND GND FUNCTION Ground GSM900 receive port GSM850 receive port Ground Antenna port DCS receive port PCS receive port Ground Ground Ground Ground Ground Ground Ground ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 7 AWT6202 APPLICATION INFORMATION * May be required to filter baseband noise Figure 3: Recommended Application Circuit 8 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 9 AWT6202 NOTES 10 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 AWT6202 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 11 AWT6202 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.3 02/2005 |
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